ANTALYA BİLİM
UNIVERSITY
Course Information Package
| Code | Description |
|---|---|
| LO1 | Describes the atomic arrangement of semiconductor materials using crystal structures, cubic and diamond lattices, and Miller indices. |
| LO2 | Explains and applies the fundamental principles of quantum mechanics (wave-particle duality, uncertainty principle, Schrödinger's equation) and the tunneling phenomenon to numerical problems. |
| LO3 | Explains electron behavior and conduction mechanisms in solids through energy bands, the Fermi–Dirac distribution function, and the density-of-states concept. |
| LO4 | Calculates equilibrium electron and hole concentrations and the Fermi energy level of a semiconductor using doping, carrier concentration relations, and the charge neutrality condition. |
| LO5 | Explains carrier drift and diffusion transport mechanisms; solves numerical problems involving conductivity, mobility, and current density. |
| LO6 | Interprets the E-k diagram; explains the concepts of effective mass and holes; calculates the Fermi probability function at specified energy levels and draws the semiconductor energy band diagram. |
| Week | Content |
|---|---|
| 1 | Introduction to semiconductor materials; elemental and compound semiconductors; types of solids |
| 2 | Space lattices, primitive/unit cell, basic crystal structures (SC, BCC, FCC) |
| 3 | Crystal planes and Miller indices; diamond structure; atomic bonding |
| 4 | Principles of quantum mechanics: energy quanta, wave-particle duality, uncertainty principle |
| 5 | Schrödinger wave equation; infinite potential well; electron in free space |
| 6 | Step potential; potential barrier and tunneling; extension of wave theory to atoms |
| 7 | Allowed and forbidden energy bands; Kronig-Penney model; k-space diagram; effective mass and hole concept |
| 8 | Midterm Exam |
| 9 | Density of states function; statistical mechanics; Fermi–Dirac Probability Function |
| 10 | Semiconductor in Equilibrium: Charge Carriers, n₀ and p₀ Equations, Intrinsic Carrier Concentration |
| 11 | Dopant Atoms and Energy Levels; Extrinsic Semiconductor; Charge Neutrality and Compensation |
| 12 | Location of the Fermi Energy Level; Variation with Doping Concentration and Temperature; Band Diagram Drawing |
| 13 | Carrier Drift: Drift Current, Mobility Effects, Conductivity, Rate Saturation |
| 14 | Carrier Diffusion: Diffusion Current Density, Total Current; Stepwise Impurity Distribution; Einstein Relation |
| 15 | Non-Equilibrium Excess Carriers: Generation and Recombination, Continuity Equations, Ambipolar Transport |
| Activity | Count | Duration (Hours) | Total |
|---|---|---|---|
| Attendance | 14 | 4.00 | 56.00 |
| Post-Class Individual Study | 14 | 4.00 | 56.00 |
| Midterm Exam/Preparation | 1 | 15.00 | 15.00 |
| Final Exam/Preparation | 1 | 20.00 | 20.00 |
| Total Workload (Hours) | 147 | ||
| ECTS Credit (Workload / 25) | 5 | ||
| # | Assessment Type | Contribution (%) |
|---|---|---|
| 1 | Midterm Exam | %45 |
| 2 | Final Exam | %55 |
| TOTAL | %100 | |
| PO \ LO |
LO1
|
LO2
|
LO3
|
LO4
|
LO5
|
LO6
|
|---|---|---|---|---|---|---|
| PO-1 | ||||||
| PO-2 | ||||||
| PO-3 | ||||||
| PO-4 | ||||||
| PO-5 | ||||||
| PO-6 | ||||||
| PO-7 | ||||||
| PO-8 | ||||||
| PO-9 | ||||||
| PO-10 | ||||||
| PO-11 |
| # | Method Name | Description | Tools |
|---|---|---|---|
| 1 | Lecture (expository teaching), interactive discussion | Listening and taking notes. | Standard classroom technologies, multimedia tools (projector, computer, digital presentations) |
| 2 | Controversial Course | Listening and comprehension, critical thinking | Standard classroom technologies, multimedia tools, projector, computer, overhead projector |
| 3 | Problem Solving | * Analyzing physical and physiological problems using problem-solving techniques and developing appropriate solutions. | |
| 4 | Demonstration | Listening and comprehension, processing observations/situations | Presentation content |
